SGM0410S 2.2a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet elektronische bauelemente 28-sep-2012 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen & lead-free description the SGM0410S provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-89 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 1 @v gs =10v t a =25c i d 2.2 a t a =70c 1.7 a pulsed drain current 2 i dm 5.5 a power dissipation 3 t a =25c p d 1.5 w operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 85 c / w thermal resistance junction-case 1 (max). r jc 36 c / w sot-89 ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 1 g 3 s d 24 0410s = date code
SGM0410S 2.2a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet elektronische bauelemente 28-sep-2012 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 5.4 - s v ds =5v, i d =2a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =80v, v gs =0, t j =25c - - 5 v ds =80v, v gs =0, t j =55c static drain-source on-resistance 2 r ds(on) - - 310 m v gs =10v, i d =2a - - 320 v gs =4.5v, i d =1a gate resistance r g - 2 - v gs = v ds =0, f =1.0mhz total gate charge(10v) q g - 9.1 - nc i d =2a v ds =50v v gs =10v gate-source charge q gs - 2 - gate-drain change q gd - 1.4 - turn-on delay time 2 t d(on) - 2 - ns v dd =50v i d =2a v gs =10v r g =3.3 rise time t r - 21.6 - turn-off delay time t d(off) - 11.2 - fall time t f - 18.8 - input capacitance c iss - 508 - pf v gs =0 v ds =15v f =1.0mhz output capacitance c oss - 29 - reverse transfer capacitance c rss - 16.4 - source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 continuous source current 1,4 i s - - 2.2 a v d =v g =0, force current pulsed source current 2,4 i sm - - 5.5 a reverse recovery time t rr - 17.5 - ns i f =2a, dl/dt=100a/ s, t j =25c reverse recovery charge q rr - 14 - nc note: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the power dissipation is limited by 150c, junc tion temperature. 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
SGM0410S 2.2a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet elektronische bauelemente 28-sep-2012 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SGM0410S 2.2a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet elektronische bauelemente 28-sep-2012 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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